Open AccessInvestigation of near-surface layer dislocation density of lithium niobate single crystal wafers using chemical etching
Author(s) -
Roman Ponomarev,
A. V. Sosunov,
O. R. Semenova,
N P Prokhorov,
M. Kuneva
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012031
Subject(s) - lithium niobate , wafer , materials science , dislocation , etching (microfabrication) , isotropic etching , crystal (programming language) , diffusion , etch pit density , layer (electronics) , optics , single crystal , optoelectronics , composite material , chemistry , crystallography , physics , computer science , thermodynamics , programming language
Using chemical etching it was shown that the density of dislocation in lithium niobate (LN) single crystal wafers is higher near the surface in depth about 20 um than in the depth of crystal. It caused to change of diffusion coefficient during the waveguide formation with proton exchange (PE) method and can increase DC-drift of intensity optical modulators based on PE-waveguides.