Open AccessSelf-consistent modeling of MBE self-catalyzed GaAs nanowire growth
Author(s) -
Sergey V. Fedina,
A. A. Koryakin,
Vladimir V. Fedorov,
G. A. Sapunov,
I. S. Mukhin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2086/1/012008
Subject(s) - nanowire , molecular beam epitaxy , arsenic , materials science , evaporation , catalysis , growth rate , kinetics , nanotechnology , chemical physics , epitaxy , chemical engineering , chemistry , thermodynamics , metallurgy , physics , organic chemistry , geometry , mathematics , layer (electronics) , quantum mechanics , engineering
Self-catalyzed GaAs nanowires are synthesized by molecular beam epitaxy at various arsenic fluxes and growth temperatures. The growth of GaAs nanowires is simulated considering the kinetics of material transport inside the catalyst droplet. The re-evaporation coefficient of arsenic is estimated for the given growth conditions. Calculated nanowire growth rate is in satisfactory agreement with the experimental data.