Open AccessOptimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes
Author(s) -
Qingling Li,
Tao Zhu,
Jialing Li,
Yan Hu
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2083/2/022090
Subject(s) - schottky diode , schottky barrier , metal–semiconductor junction , materials science , optoelectronics , wafer , reverse leakage current , silicon carbide , diode , rectifier (neural networks) , electrical engineering , breakdown voltage , voltage , electronic engineering , composite material , engineering , computer science , stochastic neural network , machine learning , recurrent neural network , artificial neural network
SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R =1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.