Open AccessResearch on Silicon Wafer Manufacturing Process and Physical Properties Testing Using High-Purity Polysilicon
Author(s) -
Xiaoming Hu
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2083/2/022050
Subject(s) - wafer , ingot , silicon , materials science , semiconductor , optoelectronics , doping , hybrid silicon laser , integrated circuit , electronic engineering , metallurgy , engineering , alloy
The shape of a bare wafer is round, so it is called a wafer or a silicon wafer. It is the basis for the production of silicon semiconductor integrated circuits. The silicon wafer is cut from a large piece of semiconductor material silicon ingot. The high-purity polysilicon (its purity is up to 99.%) is into a large single crystal, given the correct orientation and an appropriate amount of N-type or P-type doping, a silicon ingot is obtained through five-step crystal growth. Wafers (wafers) are then made from silicon ingots by more than eight processes. This paper investigates the single crystal silicon growth and wafer preparation process technology, and finally discusses the evolution of wafer size growth and changes in the development of the semiconductor industry chain.