Open AccessSimulation studies on the electron transport layer based perovskite solar cell to achieve high photovoltaic efficiency
Author(s) -
Rui Huang,
Jiyu Tang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2083/2/022011
Subject(s) - perovskite (structure) , photovoltaic system , materials science , heterojunction , perovskite solar cell , band gap , energy conversion efficiency , optoelectronics , solar cell , layer (electronics) , electron transport chain , nanotechnology , engineering physics , chemical engineering , chemistry , electrical engineering , physics , biochemistry , engineering
Perovskite solar cells have attracted the attention of the researchers in the last couple of years as a potential photovoltaic device. However, the use of expensive hole transport materials (HTM) in these devices often restricts their commercial adaptability. Thus exploring cost-effective, efficient HTL and ETL materials remain an important challenge to the researchers. In this work, simulation studies are carried out considering cupric oxide (CuO), a relatively inexpensive material as hole transport materials for planar heterojunction perovskite solar cells. The photo-voltaic performance of CuO based hole transport layer (HTL) has been estimated in combination with several electron transport materials (ETM) that include TiO 2 ,SnO 2 ,ZnO, CdS, ZnSe,PCBM and Cd 1-x Zn x S. Studies predict that among these materials, the Cd 1-x Zn x S electron transport layer (ETL) could be the most promising to result high photo-voltaic efficiency in combination to CuO based HTL. Also, the thickness and optical band gap of perovskite absorber are optimized in order to achieve maximum photo-voltaic efficiency. The cell efficiency of FTO / Cd 1-x Zn x S/CH 3 NH 3 PbI 3 /CuO/carbon structure is predicted 25.24% under optimized operational conditions with V oc , J sc and Fill Factor of 1.1eV,26.32mA/cm 2 and 87.14% respectively.