Open AccessA Transient Analysis for Amorphous Photoconductors
Author(s) -
Manu Smrity
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2070/1/012056
Subject(s) - transient (computer programming) , photoconductivity , materials science , photodetector , optoelectronics , amorphous solid , excitation , semiconductor , transient response , fermi level , electron , electric field , thermal , optics , physics , electrical engineering , chemistry , organic chemistry , quantum mechanics , computer science , engineering , operating system , meteorology
The study has been carried out for the transient response of photosensors fabricated by amorphous semiconductors under variable levels of excitation when switched off from steady-state. The curves for the entire range of the transient have been plotted in the terms of photoconductivity and they can be converted to current decay curves by multiplying with the applied electric field and the cross-sectional area of the sample. For this purpose, in the calculations, the transit time effect is included. Also, the switching time and gain of the photoconductor have been calculated. It is found that the current gain of the device increases as the density of thermal equilibrium electrons is made higher, compared to that of holes by moving the Fermi level upward. However, this also increased the switching time and its performance, as a switch becomes poorer.