Open AccessSemiconductor quantum well based shutters for NIR laser mode-locking with ∼ GHz repetition rate
Author(s) -
Н. Н. Рубцова,
A. A. Kovalyov,
Д. В. Ледовских,
В. В. Преображенский,
М. А. Putyato,
B. R. Semyagin,
Sergei A. Kuznetsov,
В. С. Пивцов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2067/1/012017
Subject(s) - shutter , materials science , laser , quantum well , semiconductor , optics , reflector (photography) , optoelectronics , semiconductor laser theory , dielectric , physics , light source
Fast semiconductor shutters based on coupled wells were designed in the search for reliable, compact and cheap key element of GHz repetition rate NIR lasers passive mode-locking. Stable 0.98 GHz repetition rate 200-fs Yb:KYW laser pulses were demonstrated for SESAM including semiconductor reflector and a layer of quantum wells. The damage threshold estimate for the SESAM is ∼ 8.87 mJ/cm 2 . Other type of shutter – DSAM – was developed with dielectric reflector and the layer of quantum wells transferred over reflector. The measured recovery time was about 2-3 ps for both types of saturable absorbers. The efficiency relative to the incident pump power was 57% for the SESAM and 19% for the DSAM. Average output power of 2.54 W for the all-semiconductor shutter (SESAM) and of 0.92 W for the dielectric mirror with a saturable absorber (DSAM) were obtained. Actual state of the art for the shutters design is considered.