Open AccessElectron-beam deposition of thermoconducting ceramic coatings for microelectronic devices
Author(s) -
Eugene Oks,
A.V. Tyunkov,
Yu. G. Yushkov,
D.B. Zolotukhin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2064/1/012072
Subject(s) - microelectronics , materials science , ceramic , dielectric , cathode ray , aluminum oxide , electron beam physical vapor deposition , nitride , evaporation , aluminium , optoelectronics , deposition (geology) , heat sink , oxide , engineering physics , composite material , metallurgy , electron , chemical vapor deposition , electrical engineering , layer (electronics) , paleontology , physics , quantum mechanics , sediment , biology , thermodynamics , engineering
This paper presents the experimental study of dielectric coatings based on aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN) ceramics as applied to their use in microelectronics. It is shown that the coatings obtained by electron-beam evaporation of ceramic in forevacuum pressures (1-100 Pa) endow devices with required dielectric parameters and improves heat sink from the surface of monolithic integral circuits.