Open AccessHysteresis effect during reactive sputtering
Author(s) -
В. М. Шаповалов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2059/1/012021
Subject(s) - sputtering , hysteresis , materials science , chemisorption , tantalum , work (physics) , analytical chemistry (journal) , chemistry , thermodynamics , metallurgy , thin film , nanotechnology , condensed matter physics , adsorption , physics , chromatography
In this work, we studied the effect of constant parameters of the sputtering system on the width of the hysteresis loop during reactive sputtering. The sticking coefficient of the reactive gas to the surface, the chamber pumping speed, the target area, etc. are taken as parameters. The comparative study was carried out by numerical solution of systems of algebraic equations describing the chemisorption and physicochemical models of metal target reactive sputtering in a single reactive gas. The calculations were performed for sputtering a tantalum target in an Ar + O 2 mixture. The studied dependences were non-linear in all cases.