Open AccessThe study of the Metglas/GaAs/Metglas magnetostrictive-piezo-semiconductive structure for practical application
Author(s) -
Д. А. Петров,
V. S. Leontiev,
Gennady Semenov,
С. Н. Иванов,
Oleg Sokolov,
A Iu Kozonov,
K A Syrovarova,
K V Semenova,
М. И. Бичурин
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2052/1/012032
Subject(s) - metglas , materials science , magnetostriction , epitaxy , optoelectronics , composite material , amorphous metal , magnetic field , physics , layer (electronics) , alloy , quantum mechanics
The results of the samples study of the magnetostrictive-piezo-conductive structure based on Metglas/GaAs/Metglas with different geometric dimensions are presented in this article. The sizes of the studied samples were 10.2x5 2x0.63 mm; 15.2x5.1x0 63 mm; 20.1x5. 2x0.63 mm - with epitaxial layers on a gallium arsenide (GaAs) plate and 15.2x5.1x0.62 mm - without epitaxial layers. The obtained results confirm the initial theoretical calculations of the observation of the maximum magnetoelectric effect in the plane of the GaAs (100) plate with the orientation of the long side of the sample along the crystallographic direction [011]. The maximum α ME was observed in a sample with dimensions of 15.2x5.1x0.62 mm without epitaxial layers and was equal to α ME = 54.19 V/(cm·Oe) at the resonance frequency RF = 145.8 kHz. In conclusion, the prospects for practical application of a design based on the Metglas/GaAs/Metglas magnetostrictive-piezo-semiconductive structure as a magnetoelectric resistor, a magnetoelectric diode and a magnetoelectric transistor are given.