Open AccessElectrical characteristics of silicon differential photoreceivers
Author(s) -
В В Гаврушко,
А. С. Ионов,
O. R. Kadriev,
В. А. Ласткин
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2052/1/012014
Subject(s) - photodiode , materials science , silicon , optoelectronics , amplifier , wavelength , electrical impedance , leakage (economics) , avalanche photodiode , voltage , optics , electrical engineering , physics , detector , cmos , engineering , economics , macroeconomics
The volt-ampere curve of silicon differential photodiodes were measured. It was found that the current-voltage curve of the photodiodes of the main and additional channels had a similar shape, without revealing a significant dependence on the implantation dose of the additional channel. The main parameters of the equivalent circuits of photodiodes are determined. In the reverse branch, the dominant impact was exerted by the surface leakage conductivity with a differential resistance of about 10 GΩ. Measurements from minus 60 °C to 60 °C showed that when using amplifiers with an input impedance of about 10 3 Ω, differential photoreceivers can be successfully used as selective short-wavelength and two-color ones.