Open AccessConstruction of internally stacked Cu2O:CuO layers in Cu2O:CuO/Gr/ZnO heterojunctions for solar cells applications
Author(s) -
M. Marina,
N Nisha Razalli,
M.Z.M. Zamzuri,
S. M. Zainal,
A Rozie Nani,
Fariza Mohamad,
Masanobu Izaki
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2051/1/012069
Subject(s) - heterojunction , materials science , annealing (glass) , transmission electron microscopy , chemical vapor deposition , monolayer , scanning electron microscope , graphene , analytical chemistry (journal) , copper , chemical engineering , nanotechnology , optoelectronics , metallurgy , chemistry , composite material , chromatography , engineering
The present work shows the construction of CuO grains on the electrodeposited Cu 2 O layer through annealing method and the photovoltaic effect of Cu 2 O:CuO/ZnO heterojunctions with graphene buffer layer is also discussed. The annealing temperature of Cu 2 O layer is varied from 100 to 300 °C. The graphene monolayer was deposited by chemical vapor deposition method. The morphology, structural and electrical properties of Cu 2 O layer were characterized by using Scanning Electron Microscopy (SEM), High Resolution Transmission Electron Microscopy (HR-TEM), X-ray Diffractometry (XRD) and I-V measurement, respectively. The Cu 2 O grains size increase as the annealing temperature increased and the CuO grains could be observed at 300°C. The graphene monolayer was successfully inserted in between Cu 2 O:CuO/ZnO heterojunction. The Cu 2 O:CuO/Gr/ZnO heterojunction shows high electrical rectification with threshold voltage of 0.5 V.