Open AccessThe Impact of Different Operation Conditions on the Plasma Extraction Transit Time Oscillation in High-Voltage Insulated Gate Bipolar Transistor Devices
Author(s) -
Xingfu Tang,
Xizi Zhang,
Zheshuai Lin,
Honglan Shi,
Anqi Dai
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2030/1/012026
Subject(s) - oscillation (cell signaling) , insulated gate bipolar transistor , transistor , gate driver , bipolar junction transistor , voltage , electrical engineering , materials science , optoelectronics , chemistry , engineering , biochemistry