Open AccessIII-V nanowires with quantum dots: MBE growth and properties
Author(s) -
R. R. Reznik,
K. P. Kotlyar,
V. O. Gridchin,
I. V. Ilkiv,
А. И. Хребтов,
Yu. B. Samsonenko,
І. П. Сошніков,
N. V. Kryzhanovskaya,
Lorenzo Leandro,
N. Akopian,
G. É. Cirlin
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2015/1/012124
Subject(s) - nanowire , quantum dot , optoelectronics , materials science , silicon , molecular beam epitaxy , photoluminescence , photon , nanotechnology , optics , epitaxy , physics , layer (electronics)
We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.