Open AccessMechanical deformation of atomically thin layers during stamp transfer
Author(s) -
Tatiana Ivanova,
Dmitry V. Permyakov,
Ekaterina Khestanova
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2015/1/012058
Subject(s) - photoluminescence , laser linewidth , heterojunction , materials science , exciton , substrate (aquarium) , thin film , layer (electronics) , work (physics) , deformation (meteorology) , transfer (computing) , thin layers , condensed matter physics , nanotechnology , optoelectronics , optics , composite material , physics , computer science , laser , geology , quantum mechanics , oceanography , parallel computing
The way transition metal dichalcogenide (TMD) strains during its transfer from one substrate to another is very interesting and holds a special place in the creation of heterostructures. In our work we observe the spectrum of photoluminescence in TMD during the transfer. For this we use a specially designed transfer system with inverted geometry. During transfer we observe a modification of exciton photoluminescence linewidth and resonance shift in atomically thin layers of TMD. We believe that our results lay grounds for the future work on the assessment of the atomically thin layer inhomogeneity introduced by the typical mechanical transfer.