Open AccessPolarization Field on Edge States of Single-layered MoS2
Author(s) -
Gongwei Hu,
Minjiang Dan,
Yan Zhang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2002/1/012053
Subject(s) - electric field , polarization (electrochemistry) , condensed matter physics , materials science , induced polarization , semiconductor , photonics , optoelectronics , ribbon , optics , physics , electrical resistivity and conductivity , chemistry , quantum mechanics , composite material
Operating quantum materials through the application of strong electric field holds great promise for the development of new-generation electronic and photonic technologies with currently inaccessible functionalities. The conventional way of applying gate voltage to produce sufficiently high electric field faces challenge in micro-nano level. Here, we explore polarization field of two-dimensional piezoelectric semiconductors under externally applied strain. The results suggest that the intensity of polarization field can exceed 10 MV/cm near the boundaries of single-layered MoS 2 ribbon. Such polarization field can trigger the metallicity-to-semiconductor (M-S) phase transition of one-dimensional edge states, and even lead to metallic bulk states. Similar phase transition can also be driven by a pure external electric field but the required intensity is in the order of MV/cm. Electric field driving the semiconducting phase of edge states presents the sensitive dependence of ribbon width but relatively robust for polarization field. This study opens a new avenue to manipulate quantum materials by high polarization field.