Open AccessEffects of Thermal Annealing on the Electrical Properties and Stability of Pt Thin Film Resistors with Ti and PtxOy Interlayers
Author(s) -
Yawen Pang,
Congchun Zhang,
Lei Peng,
Yusen Wang,
Zhenjie Lv
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/2002/1/012002
Subject(s) - resistor , materials science , annealing (glass) , temperature coefficient , microstructure , thermal stability , thin film , composite material , nanotechnology , chemical engineering , electrical engineering , voltage , engineering
Influences of annealing temperature on microstructure, electrical properties, stability, and film adhesion of Pt thin film resistors with Ti interlayer and Pt x O y interlayer were investigated and compared. Pt thin films were deposited on Al 2 O 3 substrates with Ti interlayer and Pt x O y interlayer, respectively. Two resistors showed different microstructures after annealing. Pt/Pt x O y film resistor owed more stable resistance value and larger temperature coefficient of resistance (TCR) than those of Pt/Ti film resistor. Annealed Pt/Ti film resistor exhibited poor stability than Pt/Pt x O y film resistor and the stability became worse with increasing annealing temperature. In addition, the film adhesion of two resistors was discussed.