
Magnetotransport properties of CoFeB/MgO/CoFe/MgO/CoFeB double barrier magnetic tunnel junctions with large negative magnetoresistance at room temperature
Author(s) -
Lixue Jiang,
Hiroshi Naganuma,
Mikihiko Oogane,
Kimiko Fujiwara,
T. Miyazaki,
Kazuhisa Sato,
Toyohiko J. Konno,
Shigemi Mizukami,
Yasuo Ando
Publication year - 2010
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/200/5/052009
Subject(s) - materials science , magnetoresistance , condensed matter physics , tunnel magnetoresistance , annealing (glass) , quantum tunnelling , sputter deposition , biasing , sputtering , conductance , barrier layer , layer (electronics) , voltage , thin film , magnetic field , optoelectronics , nanotechnology , composite material , physics , quantum mechanics