Open AccessX-ray reflectivity investigation of multilayer macroporous silicon structures
Author(s) -
A. S. Lenshin,
Ya A. Peshkov,
М. В. Гречкина,
С. В. Канныкин,
Yu. A. Yurakov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1984/1/012018
Subject(s) - porosity , materials science , porous silicon , scanning electron microscope , silicon , layer (electronics) , reflectivity , reflection (computer programming) , x ray reflectivity , photoluminescence , x ray , composite material , electron density , optics , mineralogy , optoelectronics , electron , nanotechnology , chemistry , thin film , physics , quantum mechanics , computer science , programming language
In this work, the X-ray reflectivity was used to study the porosity of multilayer macroporous silicon samples obtained under various conditions. The porosity calculation is based on a change in the position of the critical angle of total external reflection resulting from a decrease in the density of the porous silicon layer. Our findings show that the absence of photoluminescence in the samples is due to a porosity of about 30 % in the surface layer. The morphological features were characterized by scanning electron and atomic force microscopy.