Open AccessTotal ionizing dose effects on data retention characteristics of 55nm SONOS flash
Author(s) -
Xuanchen Guo,
Suge Yue,
Jiancheng Li,
Tao Zhou,
Qichao Zha
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1983/1/012061
Subject(s) - data retention , flash (photography) , degradation (telecommunications) , ionizing radiation , materials science , optoelectronics , electrical engineering , engineering , optics , physics , irradiation , nuclear physics
This paper researched on the effect of different bias conditions on the data retention characteristics of 55nm SONOS flash at a high total dose of 200 Krad(Si). The results show that the degradation of SONOS flash data retention characteristics is the most serious under static bias condition. And the data error rate is positively correlated with read frequency. But overall, the total ionizing dose (TID) has little effect on the data retention characteristics of SONOS flash.