Open AccessX-band monolithic three-stage LNA with GaAs E-mode PHEMT
Author(s) -
Zhengxing Zuo,
Shufeng Sun
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1971/1/012004
Subject(s) - noise figure , high electron mobility transistor , schematic , amplifier , flatness (cosmology) , low noise amplifier , electrical engineering , voltage , materials science , optoelectronics , physics , engineering , transistor , cmos , cosmology , quantum mechanics
An LNA for 8∼12 GHz is proposed in this paper. The amplifier uses a GaAs process with cost-effective, E-mode HEMTs with gate widths of 0.25 µm and 0.45 µm. The three stages of the LNA are powered by dual power supplies, with a drain operating voltage of +3V and a gate operating voltage of +0.7V. The simulation results of the schematic diagram show that the noise factor of the low-noise amplifier is less than 2.5dB in the frequency range of 8-12GHz, the in-band gain is greater than 30dB, the gain flatness is ±1.5dB, the 1dB compression point is 7dbm, the VSWRs are less than -10dB, and the LNA is absolutely stable in the X-band.