Open AccessPlasma-chemical deposition of gallium oxide layers by oxidation of gallium in the hydrogen-oxygen mixture
Author(s) -
Leonid Mochalov,
А. А. Логунов,
M. A. Kudryashov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1967/1/012037
Subject(s) - gallium , materials science , oxide , hydrogen , plasma , deposition (geology) , gallium oxide , oxygen , gallium phosphide , chemical engineering , band gap , optoelectronics , nanotechnology , inorganic chemistry , analytical chemistry (journal) , chemistry , metallurgy , organic chemistry , paleontology , physics , quantum mechanics , sediment , engineering , biology
Gallium oxide is an ultra wide band gap (the width of the band gap is 4.85 eV) transparent semiconducting oxide, that nowadays attracts much attention of scientists and manufacturers. However, the main obstacle, preventing from its massive commercial implementation, is the lack of technological methods to its production; it is supposed to be cheap, reproducible, and scalable. In this work we are developing a novel plasma-chemical method of Ga 2 O 3 thin films’ synthesis; according to this method only high-purity elemental gallium was used as the source of gallium delivered by the hydrogen flow into the plasma discharge zone, where the interaction with oxygen took place. The properties of the solid phase obtained in the conditions of heteroepitaxial growth were studied depending on the experimental parameters.