Open AccessGallium oxide thin films synthesis in different phase composition by gallium interaction with oxygen in oxygen-hydrogen plasma on silicon substrates
Author(s) -
Leonid Mochalov,
А. А. Логунов,
I. O. Prokhorov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1967/1/012036
Subject(s) - gallium , silicon , torr , substrate (aquarium) , hydrogen , oxygen , materials science , plasma , analytical chemistry (journal) , phase (matter) , silicon oxide , oxide , thin film , chemistry , optoelectronics , nanotechnology , metallurgy , organic chemistry , physics , silicon nitride , oceanography , quantum mechanics , thermodynamics , geology
A modern synthesis method by plasma-chemical deposition of gallium oxide layers was developed. High-purity gallium was utilized as the source of gallium for moving by hydrogen flow into the reaction zone for interaction with oxygen in plasma discharge. Low temperature non-equilibrium RF (40MHz) plasma discharge was utilized for initiation interactions between precursors at a pressure of 0.1 Torr. The optical emission spectroscopy was used to assess the main excited particles formed in the gas phase. The paper researches the dependence of properties of the solid phase, grown on the silicon substrate, on the experimental parameters.