Open AccessDirect one-stage plasma-chemical synthesis of chalcogenide films doped with ytterbium
Author(s) -
M. A. Kudryashov,
А. А. Логунов,
Leonid Mochalov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1967/1/012005
Subject(s) - chalcogenide , ytterbium , chemical vapor deposition , materials science , analytical chemistry (journal) , raman spectroscopy , scanning electron microscope , thin film , plasma enhanced chemical vapor deposition , inductively coupled plasma , doping , spectroscopy , arsenic , plasma , chemistry , nanotechnology , optoelectronics , optics , metallurgy , composite material , environmental chemistry , physics , quantum mechanics
In this paper we descried the plasma-enhanced chemical vapor deposition (PECVD) approach for preparation of the arsenic sulfide thin films modified by ytterbium. Radio frequency (40.68 MHz) plasma discharge at low pressure (0.1 Torr) was used for the initiation of chemical interactions between precursors. Arsenic monosulfide (As 4 S 4 ), elemental high-pure S and Yb were employed as the starting materials. The composition of the films was controlled by regulating of the temperature of the ytterbium source supplied with external heater. The Yb concentration in the Yb:As x S y films was from 1 to 7 at%. The chalcogenide materials were also studied by Scanning Electron Microscopy (SEM), Optical spectroscopy in the range of 250-1000 nm, and Raman spectroscopy.