Open AccessThe effect of annealing temperature on Ga2O3 film properties
Author(s) -
Xi Zhang,
Dayong Jiang,
Ming Zhao,
Haixin Zhang,
Mingyang Li,
Meijiao Xing,
Jichao Han,
А. Е. Романов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1965/1/012066
Subject(s) - crystallinity , annealing (glass) , materials science , analytical chemistry (journal) , sapphire , gallium , diffraction , thin film , atmospheric temperature range , crystal (programming language) , sputter deposition , sputtering , optics , nanotechnology , chemistry , metallurgy , composite material , laser , physics , chromatography , meteorology , computer science , programming language
Using Radio Frequency Magnetron Sputtering (RFMS) equipment, gallium oxide (Ga 2 O 3 ) films were deposited on sapphire substrates. Then the samples were annealed at 700 °C, 900 °C, and 1100 °C for 120 min in the air atmosphere to convert them into β-Ga 2 O 3 films with different crystalline quality. The effects of annealing temperature on the properties of β-Ga 2 O 3 thin films were investigated. The crystal structure and surface morphology were tested by X-ray Diffraction (XRD), absorption spectroscopy, and Atomic Force Microscopy (AFM). The results obtained show that, within a certain range, as the annealing temperature increases, the intensity of the XRD peaks increases, the Full Width at Half Maximum (FWHW) – decreases. The crystal grains “engorge” as the temperature rises, and the degree of crystallinity of the samples becomes better.