Open AccessCdTe Thin Films prepared by thermal evaporation on Silicon substrate for photocurrent device Applications
Author(s) -
Ali Hameed Rasheed,
Lamyaa M. Raoof,
Nafees Ahmed
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1963/1/012137
Subject(s) - cadmium telluride photovoltaics , photocurrent , materials science , heterojunction , thin film , substrate (aquarium) , optoelectronics , silicon , evaporation , analytical chemistry (journal) , nanotechnology , chemistry , oceanography , physics , chromatography , thermodynamics , geology
In this works, CdTe was deposited on glass and Si substrates using thermal evaporation techniques. CdTe has been investigated from the properties (structural, surface morphological, optical and electrical). XRD analyses found the monocrystallite, cubic structure of the CdTe thin film and there is no trace of the other material. UV-Vis measurements indicate that 1.51 eV was found the energy gap of the CdTe thin film. Ag/CdTe/Si/Ag The heterojunction Photodetector has two response peaks located at 450 nm and 900 nm with a maximum sensitivity and detectivity of Ag/CdTe/Si/Ag 0.22 A/W and 3.1×10 12 respectively.