Open AccessInfluence of magnetic field on the characteristics of n-type PSi prepared by photo-electro-chemical etching process
Author(s) -
Akram Khalaf,
Ali H. Attallah,
Amer B. Dheyab,
Alwan M. Alwan
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1963/1/012015
Subject(s) - materials science , isotropic etching , electric field , homogeneity (statistics) , perpendicular , etching (microfabrication) , porous silicon , magnetic field , optoelectronics , silicon , layer (electronics) , nanotechnology , statistics , physics , mathematics , geometry , quantum mechanics
The surface uniformity of porous silicon (PSi) morphologies will enhance the overall properties of the PSi layer. In this study, the role of perpendicular magnetic field (MF) on structural, optical, and electrical properties of (PSi) substrates are reported. The (PSi) is prepared with a photo-electrochemical etching process in the front-side illumination pathway with and without a perpendicular magnetic field (MF). The application of (MF) on the path of the electric charge carrier leads to modify the morphologies of PSi surface. The pores shape, sizes, orientation, and homogeneity, and electrical properties will vary with the (MF). The role of (MF) will contribute to an increase in the number of pores and decrease the overlapping process. And also, promotes the orientation of the relatively more defined pores across the Psi surface. The observed noticeable changes in PL spectra, electrical properties, and charge carrier transport mechanisms may be owing to the surface reconstruction process. The influence of (MF) on the characteristics of Au thin layer / PSi/c-Si/Al structures will lead to converting its behavior from the resistor to Schottky-like junction.