Open AccessThe influence of confined acoustic phonon on the Quantum Ettingshausen effect in cylindrical quantum wire with an infinite potential in presence of strong electromagnetic wave
Author(s) -
Hoang Van Ngoc,
Nguyen Thi Nguyet Anh,
Tang Thi Dien,
Nguyen Quang Bau,
Nguyen Vu Nhan
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1932/1/012008
Subject(s) - phonon , condensed matter physics , quantum wire , physics , quantum , magnetic field , radius , electric field , scattering , quantum mechanics , computer security , computer science
Based on the quantum kinetic equation method, the quantum Ettingshausen effect has been theoretically studied under the influence of confined acoustic phonon in a cylindrical quantum wire (CQW) with infinite potential in the presence of a strong electromagnetic wave. We considered a quantum wire in the presence of a constant electric field, a magnetic field, an electromagnetic wave (EMW) with an assumption that electron – confined acoustic phonon (CAP) scattering is essential. Analytical results obtained show that the EC depends on the amplitude and the frequency of the EMW in a non-linear way. Besides, the impact of phonon confinement on the above effect characterized by m -quantum number in the expression of the EC. The theoretical results have been numerically calculated for the GaAS/AlGaAs cylindrical quantum wire model. The obtained results show that the phonon confinement contributes to the EC quantitatively and qualitatively. On the other hand m is set to zero, the result obtained is similar to the case of unconfined phonon. Furthermore, by considering the quantum size effect, the values of the EC increases, the position of the magnetic-phonon resonance peak changes, and the number of peak resonant peak increases while the radius of quantum wire declines. These obtained results are different from bulk semiconductor and unconfined phonon case which donates to the theory of the Ettingshausen effect in low-dimensional semiconductor systems.