Open AccessEffect of high-k dielectric material on the characteristics of Single Gate and Double Gate Multi-Channel Junctionless Nanowire Transistors
Author(s) -
Mohammad Rabib Hossain,
Asiful Hoque,
Ishfak Tahmid,
Md. Mohsinur Rahman Adnan
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1921/1/012058
Subject(s) - transconductance , materials science , gate dielectric , dielectric , nanowire , transistor , high κ dielectric , double gate , optoelectronics , silicon nanowires , mosfet , electrical engineering , voltage , engineering
In this work, we have designed and analyzed the performance characteristics of n-type silicon based multi-channel junctionless nanowire transistors (JLNTs) for both single gate and double gate configurations. Numerical simulations using CVT (lambardi) model has been carried out to investigate the effects of different device parameters such as gate insulator dielectric, gate insulator thickness, and separating materials between channels. To illustrate and evaluate the performances, input characteristic curves, transconductance, and I o n/I o ff ratio of the devices have been extracted. It is observed that I o n/I o ff ratio are directly affected by the variation of dielectric and thickness of the gate. Devices having a high-κ dielectric provides steeper characteristics and better I o n/I o ff ratio for both the structures. The value of transconductance is also found to be greater for high-κ dielectric in both configurations with the double gate providing a higher value compared to the single one.