Open AccessImpact of Program/Erase Cycles, Total Ionizing Dose and Data Bake on Data Retention of 55nm SONOS Flash
Author(s) -
Xuanchen Guo,
Suge Yue,
Jiancheng Li,
Tao Zhou,
Qichao Zha
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1920/1/012101
Subject(s) - data retention , flash memory , flash (photography) , non volatile memory , materials science , transistor , absorbed dose , leakage (economics) , optoelectronics , computer science , computer hardware , electrical engineering , radiation , engineering , optics , physics , voltage , economics , macroeconomics
In this paper, the data retention capability of 55nm SONOS Flash under the worst condition is studied by superimposing experiments of program/erase cycles, total ionizing dose (TID) and data bake. The results show that after 100k program/erase cycles and data bake, the data retention of the memory transistor is basically not affected. After 100k program/erase cycles, 200Krad(Si) TID and data bake, the data retention of the SONOS memory transistor is mainly reflected in the radiation-induced charge leakage. If the data is rewritten after TID, irradiation has basically no impact on its data retention capability.