Open AccessStability enhancement of top-gate self-aligned tin-doped indium gallium oxide thin film transistor by low temperature annealing
Author(s) -
Yi Zhuo,
Weihua Wu,
Zhaosong Liu,
YuanJun Hsu,
Shengdong Zhang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1920/1/012020
Subject(s) - materials science , annealing (glass) , thin film transistor , passivation , doping , optoelectronics , transistor , oxygen , layer (electronics) , nanotechnology , metallurgy , electrical engineering , voltage , chemistry , engineering , organic chemistry
Top-gate self-aligned IGTO TFTs were used as an example to study the contradiction of uniformity and PBTS stability when developing TFT with high mobility. High intrinsic carrier concentration restricted the tuning of SiO 2 deposition. To ensure the uniformity, relatively higher power was employed for GI deposition to reduce donor-type oxygen vacancies. Deep electron traps formed by excess oxygen lead to poor PBTS stability. The PBTS stability was improved without deterioration of uniformity by introducing low temperature (200 °C) annealing, to control hydrogen diffusion from ILD layer which would passivate the electron traps.