z-logo
open-access-imgOpen Access
The SCAPS-1D modeling of ZnO/CdS/CdTe thin film: analysis of thickness and stoichiometric fraction of absorber layer on solar cell performance
Author(s) -
Ngurah Made Darma Putra,
Sugianto Sugianto,
Putut Marwoto,
Rini Murtafi'atin,
DP Permadis
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1918/2/022029
Subject(s) - stoichiometry , cadmium telluride photovoltaics , materials science , analytical chemistry (journal) , band gap , solar cell , layer (electronics) , mass fraction , fraction (chemistry) , doping , chemistry , optoelectronics , composite material , chromatography
Modeling of ZnO/CdS/CdTe solar cells with various thickness and stochiometric fractions has been carried out using SCAPS-1D. The variation in the thickness of the CdTe used was 0.6 μm - 6.0 μm and the variation of the stoichiometric fraction used was 0.6 - 7.0. The SCAPS-1D modeling data were characterized using I-V characteristics to determine the value of V oc , J sc , FF and their efficiency. The I-V characteristic values increased with the increase in the thickness of CdTe. The optimum thickness was 6.0 μm with V oc , J sc , FF values, respectively 0.894 volts; 31,990 mA/cm 2 ; and 84.720%, with a large efficiency of 24.228%. In the variation of the optimum stoichiometric fraction, the stoichiometric fraction was 0.6 with an energy gap of 1.486 eV and an efficiency value of 22.900% for the V oc , J sc , and FF values, respectively, 0.872 volts; 31,345 mA/cm 2 ; 83,806%.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here