Open AccessPerformance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications
Author(s) -
Murali Krishna,
M M Rahool,
K. Dinesh Kumar,
A Daniel Raj,
R. Saravana Kumar
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1917/1/012014
Subject(s) - high electron mobility transistor , materials science , capacitance , transistor , optoelectronics , conductance , equivalent series resistance , composite number , electrical engineering , and gate , channel (broadcasting) , physics , condensed matter physics , voltage , electrode , engineering , composite material , quantum mechanics