Open AccessInGaAs/InAlAs quantum well structures grown on GaAs (001) substrate by molecular beam epitaxy
Author(s) -
Xun Hou,
Yong Kang,
Jilong Tang,
Xiaohua Wang,
Zhipeng Wei
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1907/1/012065
Subject(s) - molecular beam epitaxy , indium , substrate (aquarium) , materials science , ternary operation , optoelectronics , quantum well , epitaxy , optics , nanotechnology , layer (electronics) , physics , laser , oceanography , geology , computer science , programming language
A 100 periods In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well structure was grown by molecular beam epitaxy (MBE) on GaAs (001) substrate. The XRD results of ternary alloy InGaAs and InAlAs films show that the indium component is similar to the designed structure. In addition, the XRD results show that the In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multi-quantum well structure is consistent with the designed structure. The PL spectrum of In 0.52 Ga 0.48 As/In 0.53 Al 0.47 As quantum well structures is ∼1470 nm at room temperature.