Open AccessNon-destructive peak junction temperature measurement of double-chip IGBT modules with temperature inhomogeneity
Author(s) -
Lei Wei,
Chunsheng Guo,
Huajun Guo,
Yug Liu,
Shiwei Zhang
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1907/1/012046
Subject(s) - junction temperature , chip , temperature measurement , insulated gate bipolar transistor , calibration , voltage drop , dimension (graph theory) , materials science , voltage , current (fluid) , observational error , accuracy and precision , electronic engineering , electrical engineering , power (physics) , physics , mathematics , engineering , thermodynamics , statistics , quantum mechanics , pure mathematics
Considering the problem of measuring the peak junction temperature of a double-chip module with temperature inhomogeneity, we use a double-chip parallel model to analyze peak junction temperature measurement error for the traditional electrical method. An improved test method is proposed that is based on the small current–voltage drop method—specifically the dual current test method employing an extended-dimension calibration curve library. This method realizes a match of the calibration current with the test current by expanding the dimension database, eliminates errors of temperature measurements, and finally obtains the peak junction temperature of the module. The measurement result is close to the set temperature of the model, thereby verifying its accuracy.