Open AccessTemperature-dependent photoluminescence of InAs quantum dots Grown on Silicon
Author(s) -
Lixiu Yao,
Bowen Zhang,
Xuan Fang,
Bobo Li,
Muk-Fung Yuen,
Wingpo Leung
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1907/1/012030
Subject(s) - wetting layer , photoluminescence , quantum dot , excited state , materials science , silicon , optoelectronics , wetting , condensed matter physics , thermal , physics , atomic physics , composite material , meteorology
This paper presents detailed studies on the temperature dependent photoluminescence (PL) of self-assembled InAs/GaAs quantum dots grown on planar on-axis Si (001) substrates. Through the analyze, we have a better understanding of carrier transport processes into InAs/GaAs quantum dots system. Before 160K, the carrier transport from wetting layer to excited states (ES) and ground states (GS) is domination. As the temperature keeps rising, carrier thermal escape from GS to ES is domination.