Open AccessInfluence of thickness nonuniformity of piezoelectric zinc oxide layer on parameters of microelectronic BAW solidly mounted resonator
Author(s) -
T. N. Torgash,
А. Г. Козлов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1901/1/012110
Subject(s) - resonator , materials science , microelectronics , electrical impedance , q factor , piezoelectricity , optoelectronics , acoustics , inductance , capacitance , bandwidth (computing) , electrical engineering , composite material , physics , engineering , electrode , telecommunications , voltage , quantum mechanics
The paper presents the experimental results of a study of the influence of the thickness nonuniformity of a piezoelectric zinc oxide films on electrical equivalent parameters of microelectronic BAW resonators: the static and dynamic capacitances, dynamic inductance, and dynamic resistance. These parameters were determined using the experimental frequency dependences of resonator impedance and the Butterworth-van Dyke model. The resonators under investigation had an operating frequency of 2.8…3.0 GHz; the frequency spread about 500 MHz. The quality factor of the resonators was 250…350 and the relative width of the resonant bandwidth of the resonators were equal to 0.2…0.4%.