Open AccessEffect of heat treatment temperature on the properties of silicon dioxide films derived from film-forming solutions
Author(s) -
А. Г. Козлов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1901/1/012105
Subject(s) - materials science , silicon dioxide , etching (microfabrication) , electrical resistivity and conductivity , composite material , silicon , atmospheric temperature range , refractive index , isotropic etching , metallurgy , thermodynamics , optoelectronics , electrical engineering , physics , layer (electronics) , engineering
The effect of the heat treatment temperature on the physical properties of sol-gel silicon dioxide films derived from film-forming solutions is investigated experimentally. The dependencies of the thickness of the films, their refractive index, electrical strength, resistivity, etching rate, and the level of internal mechanical stresses on the treatment temperatures in the range from 700 to 1150 °C are obtained. It was found that the dependencies of the electrical strength, the etching rate, and the level of internal mechanical stresses have the sections with the different characters. The transition region between these sections corresponds to the heat treatment temperature equal to 900-950 °C.