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Analysis of InGaP(001) surface by the low energy ion scattering spectroscopy
Author(s) -
У.О. Кутлиев,
M.K. Karimov,
F.O. Kuryozov,
K.U. Otabaeva
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1889/2/022063
Subject(s) - low energy ion scattering , scattering , ion , spectroscopy , atomic physics , materials science , flux (metallurgy) , low energy , ion beam , molecular physics , chemistry , optics , physics , organic chemistry , quantum mechanics , metallurgy
Ion scattering spectroscopy, which is a variation of low energy ion scattering (LEIS) that employs glancing scattering angles, is performed on InGaP(001) surfaces. LEIS energy distribution are simulated by computer simulation along the and direction, and the match of the positions of the flux peaks shows that the top three atomic layers are bulk-terminated. A newly observed feature are identified as a minimum in the multiple scattering when the ion beam incidence is along a low index direction. Calculated trajectories of scattered ions. This new method for analysis of large-angle LEIS data was shown to be useful for accurately investigating complex surface structures.

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