Open AccessContemporary heterostructures for solar cells improvement
Author(s) -
Alexander A. Lebedev,
A.A. Naumova,
Б.В. Жалнин,
N. T. Vagapova,
E Slyschenko,
S. K. Sharov,
E.V. Obrucheva,
S. Didenko,
А. Д. Изотов
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1889/2/022032
Subject(s) - heterojunction , epitaxy , solid solution , diffraction , solar cell , x ray crystallography , materials science , crystal structure , lattice constant , lattice (music) , analytical chemistry (journal) , crystallography , chemistry , optics , optoelectronics , nanotechnology , physics , chromatography , acoustics , metallurgy , layer (electronics)
Current investigation is focused on In x Ga 1-x P and In x Al 1-x P epitaxial layers growth. Multicomponent nanoheterostructures are the main materials for a contemporary triple-cascade solar cell, and for perspective photovoltaic devices. The optimal In x Ga 1-x P and In x Al 1-x P growth process characteristics are determined. In x Ga 1-x P epitaxial layers (with In & Ga varied on Ge), and In x Al 1-x P layers (with Al & In varied on Ge and GaAs) are investigated. During investigation X-ray diffractometry was used. Based on results of X-ray diffractometry the lattice parameter and In / Ga / Al ratio in the structure were detected. Solid phase versus the gas phase composition correlation was found based on the lattice parameters. It is determined that diffraction X-ray peaks broadening can be used as a parameter for the heterostructure perfection analyze. For the In x Ga 1-x P solid solution (X = 45–53 %) and for In x Al 1-x P solid solution (X = 46-51 %) a high quality of the single-crystal structure and a slight diffraction X-ray peaks broadening are detected.