Open AccessThe Study on AlxGa1-xN Film Deposition by Radio Frequency Magnetron Sputtering
Author(s) -
Dan-Xia Deng,
Zhaojun Qin,
Hao Hu,
Lei Jin,
Zhenhua Sun,
Honglei Wu
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1885/5/052022
Subject(s) - sputter deposition , materials science , analytical chemistry (journal) , deposition (geology) , nitrogen , cavity magnetron , sputtering , thin film , crystal (programming language) , chemistry , nanotechnology , paleontology , organic chemistry , chromatography , sediment , computer science , programming language , biology
A series of Al x Ga 1-x N films are deposited on Si (111) substrates by radio frequency magnetron sputter with different experimental Parameters. Crystallinities, elemental components and surface morphologies of films are investigated in terms of their deposition Parameters. The results reveal that the films grow along with the (004) crystal direction and have a more Al component than the target, which is attributed to the higher bond energy of Al-N. A higher pressure and nitrogen concentration lead to more surface structures such as bubbles on the Al x Ga 1-x N films. Using a pressure of 1.0 Pa and nitrogen concentration of 33%, Al x Ga 1-x N films with good quality are finalized achieved.