Open AccessTheoretical Estimation of Electronic Flow Rate at Al-TiO2 Interfaces System
Author(s) -
Hadi J. M. Al-Agealy,
Taif Saad Al Maadhede,
AbdulKareem A Al-Khafaji,
Suad H. Aleabi,
Mohsin A. Hassooni,
Rajaa Faisel Rabeea
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1879/3/032073
Subject(s) - materials science , semiconductor , electronic structure , coupling (piping) , coupling strength , volumetric flow rate , flow (mathematics) , chemical physics , condensed matter physics , thermodynamics , mechanics , chemistry , composite material , physics , optoelectronics
The mechanism of the electronic flow rate at Al-TiO 2 interfaces system has been studied using the postulate of electronic quantum theory. The different structural of two materials lead to suggestion the continuum energy level for Al metal and TiO 2 semiconductor. The electronic flow rate at the Al-TiO2 complex has affected by transition energy, coupling strength and contact at the interface of two materials. The flow charge rate at Al-TiO2 is increased by increasing coupling strength and decreasing transition energy.