Open AccessStudy The Effect of Annealing on Structural and Optical Properties of Indium Selenide (InSe) Thin Films Prepared by Vacuum Thermal Evaporation Technique
Author(s) -
Seham Hassan Salman,
M. Ali Sarmad,
Ghuzlan Sarhan Ahmed
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1879/3/032058
Subject(s) - thin film , materials science , crystallite , annealing (glass) , band gap , indium , amorphous solid , scanning electron microscope , selenide , vacuum evaporation , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , composite material , chemistry , metallurgy , selenium , chromatography
In this work, InSe thin films were deposited on glass substrates by thermal evaporation technique with a deposit rate of (2.5∓0.2) nm/sec. The thickness of the films was around (300∓10) nm, and the thin films were annealed at (100, 200 and 300)°C. The structural, morphology, and optical properties of Indium selenide thin films were studied using X-ray diffraction, Scanning Electron Microscope and UV–Visible spectrometry respectively. X-ray diffraction analyses showed that the as deposited thin films have amorphous structures. At annealing temperature of 100°C and 200°C, the films show enhanced crystalline nature, but at 300°C the film shows a polycrystalline structure with Rhombohedral phase with crystallites size of 17.459 nm. The results of the UV–Visible spectrometry in the wavelength range (300 – 1100) nm showed that the band gap energy of the thin films increased with increasing annealing temperature.