
Application of the Schottky diode as a detector of continuous terahertz radiation
Author(s) -
A. V. Badin,
V. D. Moskalenko,
D. A. Pidotova
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1862/1/012012
Subject(s) - schottky diode , terahertz radiation , optoelectronics , gallium arsenide , detector , materials science , diode , schottky barrier , semiconductor , voltage , optics , physics , electrical engineering , engineering
The results of research of the electrophysical and frequency characteristics of the semiconductor structure of a Schottky diode based on gallium arsenide are presented. The diode structure was modelled in the Sentaurus TCAD software package. A comparison of the current-voltage characteristics obtained by mathematical modeling and by experiment are presented. The frequency response in the range of 115-257 GHz is shown. The use of a Schottky diode as a continuous terahertz radiation detector is shown.