
Integrated interference wedged structures as a basis for creating compact light beam splitters with improved parameters
Author(s) -
Margarita Deneva,
Marin N. Nenchev
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1859/1/012020
Subject(s) - beam splitter , optics , planar , interference (communication) , beam (structure) , polarization (electrochemistry) , splitter , realization (probability) , reflection (computer programming) , integrated circuit , transmission (telecommunications) , laser , materials science , physics , computer science , optoelectronics , telecommunications , mathematics , channel (broadcasting) , chemistry , computer graphics (images) , statistics , programming language
Based on the idea of combining in one plate and in a puzzle-type of properly designed parts of planar sheet-like interference wedged structures (IWS), including the composed interference wedged structure (CIWS) developed by us, we show the possibility of realizing new integrated light beam splitters (for laser beams) that have useful competitive properties. Using our theoretical approach for analysis of IWS, simulations and test experiments, we show that such optimized splitters ensure a smooth splitting in an increased linear variation range of the transmission T (from ∼ 80 - 95% to 5%) and reflection ( R = 1 - T ), in combination with a large working range (linear splitting by sliding to more than ∼15 - 20 mm). The low slope of the transmission variation permits one to split beams of diameter 3 - 5 mm; focusing the beam increases this range to more than ∼15 mm. The control is performed by sliding the splitter in its plane (dimensions ∼ 5×2×0.1 cm 3 ) thus conserving the direction of the formed beams. No specific polarization is required and the use is possible of high-power laser beams. A suitable practical realization is the use of a mask technology for sequential deposition of necessary layers in integrated circuits.