Open AccessAl2O3 NPs/porous silicon/silicon photovoltaic device
Author(s) -
M. J. Khalifa,
M. H. Jaduaa,
A. N.
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1853/1/012046
Subject(s) - materials science , silicon , nanocrystalline material , porous silicon , amorphous solid , band gap , heterojunction , solar cell , chemical engineering , nanostructure , nanocrystalline silicon , nanoparticle , wafer , nanotechnology , crystalline silicon , analytical chemistry (journal) , amorphous silicon , optoelectronics , crystallography , chemistry , engineering , chromatography
Alumina nanoparticles or (Al 2 O 3 NPs) have been prepared by electrolysis method and deposited using drop casting method on glass and porous silicon (PS) substrates as thin films. Electrochemical etching of p-type silicon wafers was used to prepare nanocrystalline porous silicon. The structural and morphological properties of Al 2 O 3 NPs were investigated by XRD, AFM and SEM techniques, respectively. The optical energy band gap of Al 2 O 3 nanostructure (NSs) has been determined from its optical properties and it was around 3.6 eV. TEM has been used to investigate the nanoscale morphology of Al 2 O 3 NPs and showed the grains had a spherical shape and it confirmed the nanometric size of the prepared NPs. PS’s XRD pattern revealed that it had a single crystalline structure, whereas it was amorphous for the Al 2 O 3 NSs. The nanometric scale of both Al 2 O 3 NSs and PS was calculated by XRD patterns, it was about 34nm for Al 2 O 3 NPs and about 90 nm for PS. The diffusion effect of the Al 2 O 3 NPs on the electrical properties of heterojunctions PS/Si was studied. Photovoltaic characteristics have been reported for Al 2 O 3 NPs/PS/Si Photovoltaic device. Ag/Al 2 O 3 /PS/Si/Al solar cell parameters were reported the efficiency of solar cell was 11.8% and F.F is 32.08 %. Ag/Al 2 O 3 /PS/Si/Al Photodetector heterojunctions have two peaks of response the first one located at 350 nm and the second at 850 nm with maximum responsivity of 0.8A/W.