Open AccessFormulae for Calculating the Resistance Parameters of Irregular Through-silicon Via
Author(s) -
Yang Ju
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1852/4/042082
Subject(s) - through silicon via , cylinder , extraction (chemistry) , silicon , surface (topology) , shape factor , materials science , integrated circuit , computer science , mathematics , geometry , optoelectronics , chemistry , chromatography
The through-silicon via (TSV) is a key technology in the three-dimensional integrated circuit, and the accuracy of its parasitic parameter extraction is the important factor of ensuring accuracy of the integrated circuit simulation. Due to the influence of the production process, the through-silicon via (TSV) is not a cylinder with a smooth surface and regular shape, and with an increase in the frequency and decrease in the size of the TSV, the irregular shape has more and more influence on the parameter extraction of the TSV. To extract the resistance parameters of an irregular TSV more rapidly and accurately, we studied the high surface ratio trapezoid and rough surface TSV and put forward the analytic expressions for calculating the resistance. The two analytic expressions reflect the change rule of resistance parameters along with the size and frequency variation of the TSV. The error of analytic expression was within 5% when compared with the simulation results, which fully satisfies the requirement of accuracy.