Open AccessPlasma-enhanced atomic layer deposition of Zn-doped GaP
Author(s) -
A. V. Uvarov,
A. S. Gudovskikh,
Artem Baranov,
И. А. Морозов,
D. A. Kudryashov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1851/1/012009
Subject(s) - atomic layer deposition , materials science , impurity , band gap , doping , deposition (geology) , acceptor , layer (electronics) , analytical chemistry (journal) , band bending , plasma , optoelectronics , chemistry , nanotechnology , condensed matter physics , physics , organic chemistry , quantum mechanics , sediment , paleontology , chromatography , biology
The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES). Strong band bending was confirmed by electrical measurements performed for the p-n homojunctions formed by deposition of p-GaP on the surface of n-type GaP substrates, which indicates the acceptor behavior of the impurity. It has been shown that p-type GaP deposited by PE-ALD can be used to form photovoltaic converters.