Open AccessPlasma-enhanced atomic layer deposition of GaP/GaN digital alloys
Author(s) -
A. V. Uvarov,
A. S. Gudovskikh,
Artem Baranov,
И. А. Морозов,
D. A. Kudryashov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1851/1/012008
Subject(s) - materials science , layer (electronics) , substrate (aquarium) , alloy , atomic layer deposition , raman spectroscopy , deposition (geology) , silicon , plasma , raman scattering , band gap , chemical vapor deposition , optoelectronics , metallurgy , composite material , optics , paleontology , oceanography , physics , quantum mechanics , sediment , biology , geology
This article is concerned with plasma-enhanced atomic layer deposition of GaPN in the form of a GaP/GaN digital alloy at 380°C on a silicon substrate. It was found that the GaP/GaN digital alloy has a uniform structure without significant mechanical stresses and defects at the interface with the substrate. EDX and Raman scattering study confirmed deposition of a monolithic GaPN crystalline material with a total nitrogen content of 7.8%.