Open AccessA study of the GaN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of GaN nanocolumns
Author(s) -
K. Yu. Shubina,
D. V. Mokhov,
T. N. Berezovskaya,
E. V. Nikitina,
A. M. Mizerov
Publication year - 2021
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1851/1/012004
Subject(s) - epitaxy , coalescence (physics) , materials science , molecular beam epitaxy , optoelectronics , layer (electronics) , substrate (aquarium) , crystallography , nanotechnology , chemistry , oceanography , physics , astrobiology , geology
The GaN/Si(111) epitaxial structures were synthesized by coalescence overgrowth of GaN nanocolumns using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. Such epitaxial structures can be used as a buffer layer for obtaining high quality GaN epilayers. Structural, electrical and chemical properties of these samples were studied. It was demonstrated that KOH etching of the grown GaN/Si(111) samples results in the separation of the GaN epilayer from the substrate.